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MUR1520, RURP1520
Data Sheet January 2002
15A, 200V Ultrafast Diodes
The MUR1520 and RURP1520 are ultrafast diodes (trr < 30ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. Formerly developmental type TA09926.
Features
* Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <30ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supply * Power Switching Circuits * General Purpose
Ordering Information
PART NUMBER MUR1520 RURP1520 PACKAGE TO-220AC TO-220AC BRAND MUR1520 RURP1520
Packaging
JEDEC TO-220AC
ANODE CATHODE CATHODE (FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified MUR1520 RURP1520 UNITS V V V A A A W mJ
oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 157oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM (Halfwave 1 Phase 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
200 200 200 15 30 200 100 20 -55 to 175
(c)2002 Fairchild Semiconductor Corporation
MUR1520, RURP1520 Rev. B
MUR1520, RURP1520
Electrical Specifications
SYMBOL VF TC = 25oC, Unless Otherwise Specified TEST CONDITION IF = 15A IF = 15A, TC = 150oC IR VR = 200V VR = 200V, TC = 150oC trr IF = 1A, dIF/dt = 100A/s IF = 15A, dIF/dt = 100A/s ta tb RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time at dIF/dt = 100A/s (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current at dIF/dt = 100A/s (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. IF = 15A, dIF/dt = 100A/s IF = 15A, dIF/dt = 100A/s MIN TYP 20 10 MAX 1.05 0.85 100 500 30 35 1.5 UNITS V V A A ns ns ns ns
oC/W
Typical Performance Curves
100 400 100 IF , FORWARD CURRENT (A) IR, REVERSE CURRENT (A) 175oC 10
10
175oC 100oC 25oC
1.0
100oC
0.1
0.01 25oC
1 0
0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 VF , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
(c)2002 Fairchild Semiconductor Corporation
MUR1520, RURP1520 Rev. B
MUR1520, RURP1520 Typical Performance Curves
50
(Continued)
IF(AV) , AVERAGE FORWARD CURRENT (A)
16 14 12 DC 10 SQ. WAVE 8 6 4 2 0 140 150 160 170 180
40 trr t, TIME (ns) 30 ta tb 10
20
0 1 IF , FORWARD CURRENT (A) 10 20
TC , CASE TEMPERATURE (oC)
FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF
L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
IGBT
-
0.25 IRM IRM
FIGURE 5. trr TEST CIRCUIT
I = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV
FIGURE 6. trr WAVEFORMS AND DEFINITIONS
VAVL
IL
IL
t0 t1 t2 t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
(c)2002 Fairchild Semiconductor Corporation
MUR1520, RURP1520 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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